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27 January 2005CD variation control based on accurate characterization of 193-nm material and CD metrology
Shrinkage of device dimensions requires tighter lithography process control. Current levels of Process Control leave less than 0.5 nm budget for CD metrology. An accurate and stable metrology solution requires measurement of CD and profile that are critically dependent on thin film material characterization at various earlier process stages. Opti-Probe integrates five different technologies into a single platform to accurately characterize optical properties of 193 nm materials. Real-time CD (RT/CD) technology utilizes four independent spectra collected from the samples using a rotating-compensator spectroscopic ellipsometer (RCSE) and analyzes the spectra with an innovative numerical solution-finding approach to construct detailed CD and profile of printed features in a 2- and 3 Dimensional geometries. The study presents a comparison of:
i) Methodologies using an advanced combination of metrology techniques to characterize 193 nm materials (e.g. ARC). ii) Measured CD and profile variations using RCSE of Opti-Probe and RT/CD technology. iii) Correlation between measured CD variation and measured material characteristics. In order to achieve less than 0.3 nm accuracy and stability requirement for sub 65 nm process development and CD uniformity control, less than 0.003 variation and accuracy in optical dispersion (n&k) of critical material has to be ensured.
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Youxian Wen, Heath Pois, Jon Opsal, "CD variation control based on accurate characterization of 193-nm material and CD metrology," Proc. SPIE 5645, Advanced Microlithography Technologies, (27 January 2005); https://doi.org/10.1117/12.577276