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27 January 2005 Methodology for a sub-90nm contact layer OPC with DFM flow demonstration
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Extensive usage of Litho RET, Etch trimming and OPC techniques has become common practice in the integrated patterning flow for 90nm and beyond. In this paper, we will discuss our approach to use OPC for both etch and litho through-pitch bias correction for a 90nm contact layer. In stead of using conventional lumped model, [J.P. Stirniman, M.L. Rieger, SPIE Proc. Optical/Laser Microlithography X, Vol. 3051, p294, 1997], we introduced an alternative modeling approach to reduce our model correction into: Corrected Mask Layout = Tmask-1 (Toptical-1 (Tetch-1 (Design Layout) ) ). Post OPC checking using Synopsys SiVl platform shows that CD 3σ = 7.82nm of through-pitch OPC residual error. This study also shows that integrated patterning flow combined with LRC tools is useful to provide feedback to the designer and highlight some patterning process limitation that is design dependent.
© (2005) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Chi-Yuan Hung, Bin Zhang, Jian Zhang, and GuoQiang Xing "Methodology for a sub-90nm contact layer OPC with DFM flow demonstration", Proc. SPIE 5645, Advanced Microlithography Technologies, (27 January 2005);


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