Study on ion etching technology of infrared antireflection subwavelength relief structure

Lianhe Dong; Yu Dong; Yanjun Sun

doi:10.1117/12.575647

27 January 2005 Study on ion etching technology of infrared antireflection subwavelength relief structure

Lianhe Dong, Yu Dong, Yanjun Sun

Proceedings Volume 5645, Advanced Microlithography Technologies; (2005) https://doi.org/10.1117/12.575647
Event: Photonics Asia, 2004, Beijing, China

Abstract

Based on reactive ion etching (RIE) technology, a 2-D symmetric tetragonal and columnar subwavelength surface relief structure for infrared antireflection can be made on silicon wafer. By analyzing the impact on etch rate, anisotropy and uniformity caused by some technological parameters in reactive ion etching (RIE), parameters such as etchant gas, concentration and flow rate of the gas, pressure of reaction room and radio-frequency power density can be selected. Meanwhile, surface structure appearance, parameters and infrared transmission performance of etching sample have been measured, and the measure results have been analyzed according to technological demands.

Citation Download Citation

Lianhe Dong, Yu Dong, and Yanjun Sun "Study on ion etching technology of infrared antireflection subwavelength relief structure", Proc. SPIE 5645, Advanced Microlithography Technologies, (27 January 2005); https://doi.org/10.1117/12.575647

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