Verification of height and sidewall angle SEM metrology accuracy using Monte Carlo simulation

Roman Kris; Ofer Adan; Aviram Tam; Albert Karabekov; Ovadya Menadeva; Ram Peltinov; Oren Zoran; Nadav Wertsman; Arcadiy Vilenkin

doi:10.1117/12.575390

27 January 2005 Verification of height and sidewall angle SEM metrology accuracy using Monte Carlo simulation

Roman Kris, Ofer Adan, Aviram Tam, Albert Karabekov, Ovadya Menadeva, Ram Peltinov, Oren Zoran, Nadav Wertsman, Arcadiy Vilenkin

Author Affiliations +

Proceedings Volume 5645, Advanced Microlithography Technologies; (2005) https://doi.org/10.1117/12.575390
Event: Photonics Asia, 2004, Beijing, China

Abstract

Downscaling of semiconductor fabrication technology nodes brought forth a need to reassess the accuracy of 3D metrology. Accuracy is defined relative to a reference tool measurement. The authors have studied the accuracy of 3D SEM measurement results for various feature geometries and materials, matching the results to Monte Carlo simulations. Analysis of the SEM images based on an analytical model was performed. Careful analysis of the matching curves for 3D algorithm results and reference data (geometric parameters of the feature) reviled an appropriate behavior of algorithm in the vicinity of the nominal process window, and for sufficiently small feature rounding (production node). We performed matching of 3D CD SEM measurement to reference geometry data using Monte Carlo simulation. We analyzed the accuracy of measurement for a wide range of the feature geometry parameters (height, sidewall angle, top and bottom rounding). The simple physical model for corner rounding estimation is considered. We perform the model waveform analysis of the feature rounding influence on the height measurements. Serving as a process-monitoring tool, the algorithm performance was found in agreement with the required tolerance typical of the nominal process window ± 10%. Serving on extreme R&D, where rounding further away from the nominal window ± 10% is counted significant, there lie observable deviations in accuracy of height and sidewall angle measurement. These are explained through extreme corner rounding effects.

Citation Download Citation

Roman Kris, Ofer Adan, Aviram Tam, Albert Karabekov, Ovadya Menadeva, Ram Peltinov, Oren Zoran, Nadav Wertsman, and Arcadiy Vilenkin "Verification of height and sidewall angle SEM metrology accuracy using Monte Carlo simulation", Proc. SPIE 5645, Advanced Microlithography Technologies, (27 January 2005); https://doi.org/10.1117/12.575390

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available

Members: $17.00

Non-members: $21.00 ADD TO CART

PROCEEDINGS
12 PAGES

DOWNLOAD PAPER SAVE TO MY LIBRARY

GET CITATION

RIGHTS & PERMISSIONS

Get copyright permission Get copyright permission on Copyright Marketplace

KEYWORDS

3D metrology

Scanning electron microscopy

Monte Carlo methods

3D modeling

Metrology

Gallium

Optical lithography

Show All Keywords

Keywords/Phrases

Search In:

Publication Years