21 February 2005 Damage thresholds of HfO2/SiO2 and ZrO2/SiO2 high reflectors at 1.064 microns deposited by reactive DC magnetron sputtering
Author Affiliations +
Abstract
HfO2/SiO2 and ZrO2/SiO2 high reflectors at 1.064 microns were deposited by pulsed reactive DC magnetron sputtering. These dielectric thin film high reflectors were deposited with and without the use of an electron source. The electron source greatly decreased arcing of the magnetrons during the deposition process resulting in thin films with fewer defects. The high reflectors were laser damage tested at 1.064 microns. The optical properties of the thin film coatings were characterized prior to laser damage testing. Optical characterization techniques included angle resolved scatter (BRDF), total integrated scatter (TIS), and adiabatic calorimetry. The dependence of the laser damage threshold and optical properties on deposition conditions is reported.
© (2005) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
David Reicher, David Reicher, Martha Navarro, Martha Navarro, Robin Sydenstricker, Robin Sydenstricker, Jason Oberling, Jason Oberling, Micheal Marquez, Micheal Marquez, Julio Villafuert, Julio Villafuert, Albert A. Ogloza, Albert A. Ogloza, Joni Pentony, Joni Pentony, Peter Langston, Peter Langston, David O'Conner, David O'Conner, Denton Marrs, Denton Marrs, } "Damage thresholds of HfO2/SiO2 and ZrO2/SiO2 high reflectors at 1.064 microns deposited by reactive DC magnetron sputtering", Proc. SPIE 5647, Laser-Induced Damage in Optical Materials: 2004, (21 February 2005); doi: 10.1117/12.583022; https://doi.org/10.1117/12.583022
PROCEEDINGS
8 PAGES


SHARE
RELATED CONTENT


Back to Top