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21 February 2005 Enhancement of surface damage resistance by selective chemical removal of CeO2
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Abstract
The laser-induced damage threshold of polished fused silica surfaces is much lower than the damage threshod of its bulk. It is well known that contaminations of polished surface are one of the causes of low threshold of laser-induced surface damage. Particularly, polishing contamination such as cerium dioxide (CeO2) compound used in optical polishing process is embedded inside the surface layer, and cannot be removed by conventional cleaning. For the enhancement of surface damage resistance, various surface treatments have been applied to the removal of embedded polishing compound. In this paper, we propose a new method using slective chemical removal with high-temperature sulfuric acid (H2SO4). Sulfuric acid could dissolve only CeO2 from the fused silica surface. The surface roughness of fused silica treated H2SO4 was kept through the treatment process. At the wavelength of 355 nm, the surface damage threshold was drastically improved to the nearly same as bulk quality. However, the effect of our treatment was not observed at the wavelength of 1064 nm. The comparison with our previous results obtained from other surface treatments will be discussed.
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Tomosumi Kamimura, Shinji Motokoshi, Takayasu Sakamoto, Takahisa Jitsuno, Haruya Shiba, Shigenori Akamatsu, Hideo Horibe, Takayuki Okamoto, and Kunio Yoshida "Enhancement of surface damage resistance by selective chemical removal of CeO2", Proc. SPIE 5647, Laser-Induced Damage in Optical Materials: 2004, (21 February 2005); https://doi.org/10.1117/12.585219
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