Paper
28 February 2005 Field-induced THz wave emission with nanometer resolution
Author Affiliations +
Proceedings Volume 5649, Smart Structures, Devices, and Systems II; (2005) https://doi.org/10.1117/12.606025
Event: Smart Materials, Nano-, and Micro-Smart Systems, 2004, Sydney, Australia
Abstract
A scanning near-field microscope provides nano-scale imaging capability of field induced THz wave emission spectra from semiconductor surfaces and interfaces. Combined with a scanning probe tip and femtosecond optical pulse excitation, THz wave emission with sub-100 nm spatial resolution has been demonstrated. The scanning probe tip modulates semiconductor surface field with nano-scale accuracy through the imaging charge dipole, the tunneling current, or the contact current. The modulated THz wave from the highly localized area under the scanning tip is detected in time-domain. This aperture-less imaging method leads the way to study nano-scale to atomic level emission spectroscopy at THz frequency range.
© (2005) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Tao Yuan, Hongkyu Park, Jingzhou Xu, Haewook Han, and X.-C. Zhang "Field-induced THz wave emission with nanometer resolution", Proc. SPIE 5649, Smart Structures, Devices, and Systems II, (28 February 2005); https://doi.org/10.1117/12.606025
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Cited by 15 scholarly publications.
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KEYWORDS
Terahertz radiation

Semiconducting wafers

Modulation

Indium arsenide

Semiconductors

Microscopes

Metals

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