Paper
28 February 2005 Mode beating in tapered high-power deeply etched semiconductor amplifiers
Author Affiliations +
Proceedings Volume 5649, Smart Structures, Devices, and Systems II; (2005) https://doi.org/10.1117/12.581415
Event: Smart Materials, Nano-, and Micro-Smart Systems, 2004, Sydney, Australia
Abstract
The evolution of the optical beam profile along a high-power tapered semiconductor amplifier has been demonstrated by using a rigorous finite element-based and full-vectorial modal approach, coupled with the beam propagation method. Numerically simulated results indicate that many higher order modes are generated and propagate along the tapered structure and their interference with the fundamental mode causes variations of the optical beam, both along the transverse and the axial directions, which significantly modifies the output beam quality.
© (2005) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Muttukrishnan Rajarajan, B. M. Azizur Rahman, Riyadh A. Abdallah, Salah S. A. Obayya, and Kenneth T. V. Grattan "Mode beating in tapered high-power deeply etched semiconductor amplifiers", Proc. SPIE 5649, Smart Structures, Devices, and Systems II, (28 February 2005); https://doi.org/10.1117/12.581415
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KEYWORDS
Optical amplifiers

Semiconductors

Waveguides

Beam propagation method

Refractive index

Beam shaping

Finite element methods

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