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28 February 2005 Mode beating in tapered high-power deeply etched semiconductor amplifiers
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Abstract
The evolution of the optical beam profile along a high-power tapered semiconductor amplifier has been demonstrated by using a rigorous finite element-based and full-vectorial modal approach, coupled with the beam propagation method. Numerically simulated results indicate that many higher order modes are generated and propagate along the tapered structure and their interference with the fundamental mode causes variations of the optical beam, both along the transverse and the axial directions, which significantly modifies the output beam quality.
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Muttukrishnan Rajarajan, B. M. Azizur Rahman, Riyadh A. Abdallah, Salah S. A. Obayya, and Kenneth T. V. Grattan "Mode beating in tapered high-power deeply etched semiconductor amplifiers", Proc. SPIE 5649, Smart Structures, Devices, and Systems II, (28 February 2005); https://doi.org/10.1117/12.581415
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