28 February 2005 The fabrication of devices in silicon using scanning probe microscopy
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Abstract
Over the last three years we have demonstrated key milestones in the fabrication of buried nano-scale devices in silicon using an ultra-high vacuum scanning tunnelling microscope (STM) and silicon molecular beam epitaxy (MBE). Recently we have achieved the final step of connecting the STM-patterned buried phosphorus devices to the outside world to perform electrical measurements. The results of our low temperature magnetotransport measurements highlight the potential of this approach for the creation of atomic-scale devices.
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Frank J. Ruess, Frank J. Ruess, Lars Oberbeck, Lars Oberbeck, Michelle Y. Simmons, Michelle Y. Simmons, Kuan Eng J. Goh, Kuan Eng J. Goh, Alex R. Hamilton, Alex R. Hamilton, Toby Hallam, Toby Hallam, Neil J. Curson, Neil J. Curson, Robert G. Clark, Robert G. Clark, } "The fabrication of devices in silicon using scanning probe microscopy", Proc. SPIE 5649, Smart Structures, Devices, and Systems II, (28 February 2005); doi: 10.1117/12.582283; https://doi.org/10.1117/12.582283
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