Analysis of Defects in Single Level Conducting Films

R. R. Allen; T. A. Brunner; R. P. Bane

doi:10.1117/12.949742

2 January 1986 Analysis of Defects in Single Level Conducting Films

R. R. Allen, T. A. Brunner, R. P. Bane

Proceedings Volume 0565, Micron and Submicron Integrated Circuit Metrology; (1986) https://doi.org/10.1117/12.949742
Event: 29th Annual Technical Symposium, 1985, San Diego, United States

Abstract

The defect density of the metal layers in a double level metal process was studied. The dominant failure mode, with positive photoresist, was found to be intra-level metal shorts caused by particulate contamination. The major particle source was found to be deposited oxides used as dielectrics. Our processing environment, metal deposition process and lithography process were found to be relatively minor contributors.

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R. R. Allen, T. A. Brunner, and R. P. Bane "Analysis of Defects in Single Level Conducting Films", Proc. SPIE 0565, Micron and Submicron Integrated Circuit Metrology, (2 January 1986); https://doi.org/10.1117/12.949742

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