Paper
23 February 2005 Exploration of a new wafer-level hermetic sealing method by Cu/Sn isothermal solidification technique for MEMS/NEMS devices
Maohua Du, Wei Xu, Le Luo
Author Affiliations +
Proceedings Volume 5650, Micro- and Nanotechnology: Materials, Processes, Packaging, and Systems II; (2005) https://doi.org/10.1117/12.580355
Event: Smart Materials, Nano-, and Micro-Smart Systems, 2004, Sydney, Australia
Abstract
A study was preformed to explore the possibility of using Isothermal Solidification technique for sealing medium preparation in wafer level vacuum/hermetic package of MEMS/NEMS devices and to examine the effect of plasma treatment and bonding environment on the shear strength of the sealed structure. Appropriate plasma treatment can improve the bonding strength of the sealing structure and optimized parameters were obtained. The bonding strength of the sample bonded in vacuum environment is larger than in other environments. The hermeticity of the sealed structure was also evaluated. Preliminary results show that the sealed structure can satisfy the hermetic package criterion of MIL STD 883E.
© (2005) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Maohua Du, Wei Xu, and Le Luo "Exploration of a new wafer-level hermetic sealing method by Cu/Sn isothermal solidification technique for MEMS/NEMS devices", Proc. SPIE 5650, Micro- and Nanotechnology: Materials, Processes, Packaging, and Systems II, (23 February 2005); https://doi.org/10.1117/12.580355
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Cited by 6 scholarly publications.
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KEYWORDS
Tin

Plasma treatment

Copper

Nitrogen

Solids

Plasma

Semiconducting wafers

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