Paper
23 February 2005 Nanofabrication of charge-based Si:P quantum computer devices using single-ion implantation
Mladen Mitic, Soren E. Andresen, Victor C. Chan, Tilo Markus Buehler, Andrew J. Ferguson, Eric Gauja, Fay E. Hudson, David J. Reilly, A. R. Hamilton, Andrew S. Dzurak, Robert G. Clark, Changyi Yang, Toby Hopf, Christopher I. Pakes, David N. Jamieson
Author Affiliations +
Proceedings Volume 5650, Micro- and Nanotechnology: Materials, Processes, Packaging, and Systems II; (2005) https://doi.org/10.1117/12.583284
Event: Smart Materials, Nano-, and Micro-Smart Systems, 2004, Sydney, Australia
Abstract
We report on progress towards a charge-based qubit using phosphorus atoms implanted in a silicon substrate. Prototype devices have been fabricated using standard lithographic techniques together with a new method of controlled single ion implantation using on-chip detector electrodes. Positional accuracy of the implanted ions was achieved using a nanoaperture mask defined using electron beam lithography. The two implanted phosphorus atoms are positioned ~50 nm apart, to form a qubit test device. A series of process steps has been developed to repair implant damage, define surface control gates, and to define single electron transistors used for qubit readout via the detection of sub-electron charge transfer signals. Preliminary electrical measurements on these devices show single charge transfer events that are resilient to thermal cycling.
© (2005) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Mladen Mitic, Soren E. Andresen, Victor C. Chan, Tilo Markus Buehler, Andrew J. Ferguson, Eric Gauja, Fay E. Hudson, David J. Reilly, A. R. Hamilton, Andrew S. Dzurak, Robert G. Clark, Changyi Yang, Toby Hopf, Christopher I. Pakes, and David N. Jamieson "Nanofabrication of charge-based Si:P quantum computer devices using single-ion implantation", Proc. SPIE 5650, Micro- and Nanotechnology: Materials, Processes, Packaging, and Systems II, (23 February 2005); https://doi.org/10.1117/12.583284
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Cited by 1 scholarly publication and 1 patent.
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KEYWORDS
Sensors

Oxides

Ions

Silicon

Diffusion

Electrodes

Phosphorus

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