23 February 2005 Nanofabrication of charge-based Si:P quantum computer devices using single-ion implantation
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Abstract
We report on progress towards a charge-based qubit using phosphorus atoms implanted in a silicon substrate. Prototype devices have been fabricated using standard lithographic techniques together with a new method of controlled single ion implantation using on-chip detector electrodes. Positional accuracy of the implanted ions was achieved using a nanoaperture mask defined using electron beam lithography. The two implanted phosphorus atoms are positioned ~50 nm apart, to form a qubit test device. A series of process steps has been developed to repair implant damage, define surface control gates, and to define single electron transistors used for qubit readout via the detection of sub-electron charge transfer signals. Preliminary electrical measurements on these devices show single charge transfer events that are resilient to thermal cycling.
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Mladen Mitic, Mladen Mitic, Soren E. Andresen, Soren E. Andresen, Victor C. Chan, Victor C. Chan, Tilo Markus Buehler, Tilo Markus Buehler, Andrew J. Ferguson, Andrew J. Ferguson, Eric Gauja, Eric Gauja, Fay E. Hudson, Fay E. Hudson, David J. Reilly, David J. Reilly, A. R. Hamilton, A. R. Hamilton, Andrew S. Dzurak, Andrew S. Dzurak, Robert G. Clark, Robert G. Clark, Changyi Yang, Changyi Yang, Toby Hopf, Toby Hopf, Christopher I. Pakes, Christopher I. Pakes, David N. Jamieson, David N. Jamieson, } "Nanofabrication of charge-based Si:P quantum computer devices using single-ion implantation", Proc. SPIE 5650, Micro- and Nanotechnology: Materials, Processes, Packaging, and Systems II, (23 February 2005); doi: 10.1117/12.583284; https://doi.org/10.1117/12.583284
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