Selective adhesive bonding with SU-8 for zero-level-packaging

Danny S. Reuter; Andreas Bertz; Gunther Schwenzer; Thomas Gessner

doi:10.1117/12.581829

23 February 2005 Selective adhesive bonding with SU-8 for zero-level-packaging

Danny S. Reuter, Andreas Bertz, Gunther Schwenzer, Thomas Gessner

Proceedings Volume 5650, Micro- and Nanotechnology: Materials, Processes, Packaging, and Systems II; (2005) https://doi.org/10.1117/12.581829
Event: Smart Materials, Nano-, and Micro-Smart Systems, 2004, Sydney, Australia

Abstract

An adhesive bonding technique for wafer-level encapsulation of high aspect ratio microstructures (HARMS) is presented. The adhesive material is spin coated on a cap wafer and structured prior to bonding. Thus sealed cavities of variable height are created in the bonding layer. SU-8 negative photoresist is used as the adhesive material in combination with miscellaneous surface materials: silicon, silicon dioxide and aluminum. The influences of the bonding process parameters - bonding pressure, bonding temperature and process time - as well as the SU-8 layer properties on the bond strength and the homogeneity of the bond have been investigated. To evaluate the process conditions the shear strength of the bond has been measured according to the ASTM standard D 1002 for adhesive bonds. Each bond interface was tested by 32 test specimens of 10 by 10 mm² side length. With optimal process conditions shear strength of 19.2, 23.3 and 21.3 MPa have been obtained for silicon, silicon dioxide and aluminium respectively. The application of the selective adhesive bonding technique has been successfully demonstrated by encapsulating different types of single crystal silicon inertial sensors.

Citation Download Citation

Danny S. Reuter, Andreas Bertz, Gunther Schwenzer, and Thomas Gessner "Selective adhesive bonding with SU-8 for zero-level-packaging", Proc. SPIE 5650, Micro- and Nanotechnology: Materials, Processes, Packaging, and Systems II, (23 February 2005); https://doi.org/10.1117/12.581829

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