23 February 2005 Single-electron transistor coupled to a silicon nano-MOSFET
Author Affiliations +
Abstract
By capactively coupling sensitive charge detectors (i.e. single-electron transistors - SETs) to nanostructures such as quantum dots and two-dimensional systems, it is possible to investigate charge transport properties in extremely low conduction regimes where direct transport measurements are increasingly difficult. Ion-implanted nano-MOSFETs coupled to aluminium SETs have been constructed in order to study charge transport between locally doped regions in Si at mK temperatures. This configuration allows for direct source-drain measurement as well as non-invasive charge detection. Of particular interest are the effects of material defects and gate control on charge transport, which is of relevance to Si-based quantum computing.
© (2005) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Victor C. Chan, Victor C. Chan, Tilo Markus Buehler, Tilo Markus Buehler, Dane R. McCamey, Dane R. McCamey, Andrew J. Ferguson, Andrew J. Ferguson, David J. Reilly, David J. Reilly, Changyi Yang, Changyi Yang, Toby Hopf, Toby Hopf, Andrew S. Dzurak, Andrew S. Dzurak, A. R. Hamilton, A. R. Hamilton, David N. Jamieson, David N. Jamieson, Robert G. Clark, Robert G. Clark, } "Single-electron transistor coupled to a silicon nano-MOSFET", Proc. SPIE 5650, Micro- and Nanotechnology: Materials, Processes, Packaging, and Systems II, (23 February 2005); doi: 10.1117/12.583293; https://doi.org/10.1117/12.583293
PROCEEDINGS
5 PAGES


SHARE
RELATED CONTENT


Back to Top