23 February 2005 Structures and light emission properties of ion beam synthesized FeSi2 in silicon
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Semiconducting FeSi2 has attracted considerable amount of research interest in the past decade for its potential applications as a silicon-based light emitting material. In this work, FeSi2 precipitates were formed in Si by iron implantation into silicon using a metal vapor vacuum arc ion source. The structures and light emitting properties of these ion-beam-synthesized FeSi2 precipitates were studied in details using various characterization techniques, including transmission electron microscopy (TEM) and photoluminescence measurements. It was found that the implantation temperature played an important role on the dislocation loop formation and hence the FeSi2 phase formation during the subsequent thermal annealing. Photoluminescence (PL) spectra were measured as a function of temperature from 80 to 300 K. Combining the TEM and PL results, the origins of the PL could be distinguished to be either from the defect-related emission of Si or from the FeSi2 precipitates. The FeSi2 precipitates were found to be highly-strained or relaxed depending on the implantation and annealing conditions. The band gap energy of the relaxed samples was determined to be about 11 meV higher than that of the highly strained samples. Simple metal-oxide-semiconductor (MOS) diode structures were fabricated to study the electroluminescence (EL) properties from this FeSi2/Si system. Preliminary results showed that clear EL signals were obtained even at room temperature for samples prepared at appropriate conditions. There are significant differences between the EL and PL spectra and the mechanisms of the EL emission has yet to be further investigated.
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C. F. Chow, C. F. Chow, Y. Gao, Y. Gao, S. P. Wong, S. P. Wong, N. Ke, N. Ke, Q. Li, Q. Li, W. Y. Cheung, W. Y. Cheung, G. Shao, G. Shao, M. A. Lourenco, M. A. Lourenco, K. P. Homewood, K. P. Homewood, } "Structures and light emission properties of ion beam synthesized FeSi2 in silicon", Proc. SPIE 5650, Micro- and Nanotechnology: Materials, Processes, Packaging, and Systems II, (23 February 2005); doi: 10.1117/12.582335; https://doi.org/10.1117/12.582335

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