8 October 2004 A different approach for the computation of refractive index change in quantum-well diode lasers for different injection levels
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Proceedings Volume 5662, Fifth International Symposium on Laser Precision Microfabrication; (2004) https://doi.org/10.1117/12.596373
Event: Fifth International Symposium on Laser Precision Microfabrication, 2004, Nara, Japan
Abstract
A model is developed for the carrier induced refractive-index change in Quantum-well (QW) lasers which affects different mechanisms. The model is based on Artificial Neural Network (ANN) which provides a powerful approach for setting up a complex non-linear model. Different algorithms are tried and tested for different injection current levels. Both the training and the test results for refractive-index change are in very good agreement with the experimental findings reported elsewhere.
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Fatih V. Celebi, Kenan Danisman, "A different approach for the computation of refractive index change in quantum-well diode lasers for different injection levels", Proc. SPIE 5662, Fifth International Symposium on Laser Precision Microfabrication, (8 October 2004); doi: 10.1117/12.596373; https://doi.org/10.1117/12.596373
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