8 October 2004 Laser direct write for release of SiO2 MEMS and nano-scale devices
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Proceedings Volume 5662, Fifth International Symposium on Laser Precision Microfabrication; (2004) https://doi.org/10.1117/12.596553
Event: Fifth International Symposium on Laser Precision Microfabrication, 2004, Nara, Japan
Abstract
We have developed a novel process for releasing MEMS and nano-scale devices formed in SiO2 on a Si substrate. Current approaches for releasing MEMS made of SiO2 use wet chemical etches (e.g. EDTA or KOH) or gas phase chemical etches such as xenon difluoride. These approaches are inherently messy and difficult to control. We have shown that it is possible to release patterned SiO2 structures using a direct write laser assisted chemical etching technique. The developed process removes Si only from the immediate area leaving behind the SiO2 device. The technique allows the surrounding larger area of the Si wafer to be conserved for use in packaging or integration with electronics. Further, as the release is accomplished in the gas phase, we see none of the problems of "stiction" associated with a liquid etch release process. In fact, we have found this method to be so gentle that we have been able to release devices made from SiO2 films on the order of hundreds of nanometers.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Margaret H. Abraham, Henry Helvajian, "Laser direct write for release of SiO2 MEMS and nano-scale devices", Proc. SPIE 5662, Fifth International Symposium on Laser Precision Microfabrication, (8 October 2004); doi: 10.1117/12.596553; https://doi.org/10.1117/12.596553
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