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8 October 2004 Performance of liquid xenon jet laser-produced-plasma light source for EUV lithography
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Proceedings Volume 5662, Fifth International Symposium on Laser Precision Microfabrication; (2004) https://doi.org/10.1117/12.596356
Event: Fifth International Symposium on Laser Precision Microfabrication, 2004, Nara, Japan
Abstract
The main technological challenge of a future extreme ultraviolet (EUV) light source is the required average power of 115W at the intermediate focus. High repetition rate laser produced plasma (LPP) sources are very promising to face this challenge. We report the current status of the laser produced plasma light source system under development at EUVA. The system consists of the following main components: The plasma target is a liquid xenon jet with a maxium diameter of 50 micrometer and a velocity of more than 35m/s. A Nd:YAG laser oscillating at 1064 nm produces the plasma. The laser is a master oscillator power amplifier (MOPA) configuration with a maximum repetition rate of 10 kHz and an average power of 1 kW. The EUV system currently delivers an average EUV in-band power of 4 W (2% bandwidth, 2π sr) having a stability of 0.54% (1σ, 50-pulse moving average). In order to evaluate a further increase of the repetition rate, xenon jet characteristics and EUV plasma images have been investigated at 10 kHz. In addition, a conversion efficiency of 0.74% (2% bw, 2π sr) has been obtained at low repetition rate operation. This paper presents the progress of our LPP light source development.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Takashi Suganuma, Tamotsu Abe, Hiroshi Komori, Yuichi Takabayashi, and Akira Endo "Performance of liquid xenon jet laser-produced-plasma light source for EUV lithography", Proc. SPIE 5662, Fifth International Symposium on Laser Precision Microfabrication, (8 October 2004); doi: 10.1117/12.596356; https://doi.org/10.1117/12.596356
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