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8 October 2004 Room-temperature fabrication of β-FeSi2 microprecipitates by pulsed laser deposition
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Proceedings Volume 5662, Fifth International Symposium on Laser Precision Microfabrication; (2004) https://doi.org/10.1117/12.596386
Event: Fifth International Symposium on Laser Precision Microfabrication, 2004, Nara, Japan
Abstract
We have developed a room-temperature fabrication process for β-FeSi2 microprecipitates through the active use of droplets generated by pulsed laser deposition. The droplets generated by KrF excimer laser ablation of an α-FeSi2 metallic target were characterized by micro-Raman spectroscopy with a spatial resolution of 1 μm and X-ray diffraction measurements. As a result, it was confirmed that the micron-sized droplets precipitated as the β-FeSi2 semiconducting phase on silicon and silica glass substrates maintained even at room temperature, whereas the rest of the deposited film was amorphous. It was also found that films containing a high density of β-FeSi2 microprecipitates exhibited 1.55 μm photoluminescence at low temperature after annealing at 800°C for 6 h in an argon atmosphere.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Aiko Narazaki, Tadatake Sato, Yoshizo Kawaguchi, and Hiroyuki Niino "Room-temperature fabrication of β-FeSi2 microprecipitates by pulsed laser deposition", Proc. SPIE 5662, Fifth International Symposium on Laser Precision Microfabrication, (8 October 2004); https://doi.org/10.1117/12.596386
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