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8 October 2004 Through-hole processing of aluminum nitride and silicon wafers using short-pulse lasers
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Proceedings Volume 5662, Fifth International Symposium on Laser Precision Microfabrication; (2004) https://doi.org/10.1117/12.596745
Event: Fifth International Symposium on Laser Precision Microfabrication, 2004, Nara, Japan
Abstract
Compact short pulse (200 - 350 ps) laser systems using SBS and SRS pulse compression techniques have been constructed. Fine processing of aluminum nitride and silicon wafer has been studied by using these laser pulses and compared with the results processed by 60 femto second laser system. Through-holes are formed on wafers by irradiation of the laser pulses, and the relationship between hole shapes and the processing conditions has been studied. The hole shape relates with the focusing length of the lens, laser fluence, pulse width and the wave length. Trepanning technique has been examined also to improve the hole shape. The result is quite.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Kyoichi Deki, Masaki Kanai, Hiroyuki Takizawa, Fumiaki Matsuoka, and Takashi Arisawa "Through-hole processing of aluminum nitride and silicon wafers using short-pulse lasers", Proc. SPIE 5662, Fifth International Symposium on Laser Precision Microfabrication, (8 October 2004); https://doi.org/10.1117/12.596745
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