Amorphous Silicon FET Addressed Liquid Crystal Spatial Light Modulator

J. E. Bigelow; D. E. Castleberry; W. W. Piper; G. E. Possin

doi:10.1117/12.949837

4 March 1986 Amorphous Silicon FET Addressed Liquid Crystal Spatial Light Modulator

J. E. Bigelow, D. E. Castleberry, W. W. Piper, G. E. Possin

Proceedings Volume 0567, Advances in Materials for Active Optics; (1986) https://doi.org/10.1117/12.949837
Event: 29th Annual Technical Symposium, 1985, San Diego, United States

Abstract

Advances in the technology of fabrication of large arrays of thin-film field-effect transistors for liquid crystal display applications is making available an important new component for many other applications such as spatial light modulators for optical signal processors. Hydrogenated amorphous silicon has a number of advantages over other semiconductors for such arrays relating primarily to cost and yield due to the simple, low temperature processing, and options offered by a transmissive device. There are also disadvantages stemming from the low electron mobility which is roughly 0.1% that of crystalline silicon. Still, sub-micro-second switching times are possible which is not only adequate for liquid crystal control within very large arrays but suitable for much of the row and column driving circuitry as well. In this paper we will describe the characteristics of a-Si devices, circuits, and LC cells controlled by them. We will also discuss the technology in the context of projecting what the capabilities of such devices could be for spatial light modulators and displays.

Citation Download Citation

J. E. Bigelow, D. E. Castleberry, W. W. Piper, and G. E. Possin "Amorphous Silicon FET Addressed Liquid Crystal Spatial Light Modulator", Proc. SPIE 0567, Advances in Materials for Active Optics, (4 March 1986); https://doi.org/10.1117/12.949837

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