7 March 2005 Design and performance of charge multiplying color FIT CCD image sensor
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Abstract
The paper describes important design features and resulting performance of a color VGA format Frame Interline Transfer CCD image sensor that utilizes Charge Carrier Multiplication for increased sensitivity and low noise. The description includes the details of the photo site design that is formed by a pinned photodiode with a lateral anti-blooming drain. The design details of the photo-site transfer gate region are also given together with the design details of the vertical CCD register that result in a fast charge transfer into the memory and thus low smear. Since the device is not using the vertical overflow anti-blooming drain for the booming control, the near IR performance is not reduced. The color sensing capability is achieved by employing either RGB or complementary color filters. The remaining focus of the article is on the typical characterization results such as the CTE, image lag, and low dark current. The NIR and color imaging performance at low light levels is investigated in detail and characterized. In conclusion several typical scene color images taken by the camera that uses the developed charge-multiplying FIT CCD image sensor are shown.
© (2005) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Izumi Kobayashi, Izumi Kobayashi, Hiroaki Shibuya, Hiroaki Shibuya, Toshio Tachibana, Toshio Tachibana, Takahiro Nishiwaki, Takahiro Nishiwaki, Shunji Kashima, Shunji Kashima, Jaroslav Hynecek, Jaroslav Hynecek, } "Design and performance of charge multiplying color FIT CCD image sensor", Proc. SPIE 5677, Sensors and Camera Systems for Scientific and Industrial Applications VI, (7 March 2005); doi: 10.1117/12.585358; https://doi.org/10.1117/12.585358
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