23 March 2005 Study of point defects created by high-intensity ultrashort pulse laser in YLF crystals
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In this work we report the creation of color centers in LiF and YLF crystals by high intensity, ultrashort laser pulses. We used pure and Tm3+ and Oxygen doped samples, all irradiated with a Ti:Sapphire CPA laser system and also with electron beam, at room temperature. In both kinds of irradiations the production of photochromic damages and color centers that have absorption bands in UV and visible range was observed. A comparison between the two kinds of irradiation was done and the involved processes are described in this paper. F2+ stable centers were produced by the ultrashort laser pulses irradiation in contrast to the well-known, short lived centers produced by electron beams, and a mechanism was proposed to explain the observed stability.
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Lilia Coronato Courrol, Lilia Coronato Courrol, Everson Braganca dos Santos, Everson Braganca dos Santos, Ricardo Elgul Samad, Ricardo Elgul Samad, Izilda Marcia Ranieri, Izilda Marcia Ranieri, Laercio Gomes, Laercio Gomes, Anderson Zanardi de Freitas, Anderson Zanardi de Freitas, Nilson Dias Vieira, Nilson Dias Vieira, } "Study of point defects created by high-intensity ultrashort pulse laser in YLF crystals", Proc. SPIE 5710, Nonlinear Frequency Generation and Conversion: Materials, Devices, and Applications IV, (23 March 2005); doi: 10.1117/12.588407; https://doi.org/10.1117/12.588407

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