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17 March 2005 9xx high-power broad-area laser diodes
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In this communication we report on the performance characteristics of Bookham’s latest generation of 915-990 nm broad area single emitter (BASE) laser diodes with around 90 μm wide aperture. Representative high power devices in the wavelength range of 950-960 nm, mounted p-side down onto expansion matched assemblies using our highly reliable AuSn-solder technology, reveal a high slope efficiency of around 1.05 W/A during CW operation at 25°C heat sink temperature. Coupling efficiency into multi-mode fiber with 0.15 or 0.22 numerical aperture exceeds 93% mainly due to the low vertical divergence of the laser beam. In addition, low laser threshold and series resistance enable more than 62% maximum wall plug efficiency of the present generation of the laser diodes. Preliminary tests of new prototypes reveal already excellent performance characteristics of the next generation device with up to 19.9 W light output power in pulsed operation and 16 W for thermally limited CW operation.
© (2005) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Berthold E. Schmidt, Boris Sverdlov, Susanne Pawlik, Norbert Lichtenstein, Juergen Mueller, Bernd Valk, Rainer K. Baettig, Bernd Mayer, and Christoph S. Harder "9xx high-power broad-area laser diodes", Proc. SPIE 5711, High-Power Diode Laser Technology and Applications III, (17 March 2005);

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