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17 March 2005 High-brightness 9xx and 14xx single-mode emitter array laser bars
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In this communication we report on the successful realization of Single-mode Emitter Array Laser (SEAL) bars. Various laser bars with a cavity length of 2.4 mm containing between 25 to 350 narrow stripe lateral single-mode emitters have been realized and mounted epi-side down onto expansion matched heatsinks using a stable AuSn-solder technology. Optical power in excess of 1 W per emitter has been obtained resulting in more than 200 W total output power for the highest emitter density. While these total power levels are comparable to conventional broad-area laser bars (BALB), the brightness of each of the emitters is drastically improved over the BALB approach making theses bars ideal candidates for beam-shaping concepts. Lateral farfield measurements with smooth gaussian patterns, high electro-optical conversion efficiency well above 60% and threshold currents as low as 0.5 A are presented. Similar devices realized from the InGaAsP/InP material system deliver in excess of 20 W from 100 NS emitters at wavelengths around 1480 nm.
© (2005) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Norbert Lichtenstein, Yvonne Manz, Pascal Mauron, Arnaud Fily, Berthold E. Schmidt, Juergen Mueller, Susanne Pawlik, Boris Sverdlov, Stefan Weiss, Achim Thies, and Christoph S. Harder "High-brightness 9xx and 14xx single-mode emitter array laser bars", Proc. SPIE 5711, High-Power Diode Laser Technology and Applications III, (17 March 2005);

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