High-power 1060-nm InGaAs/GaAs single-mode laser diodes

Wei Gao; Andre Mastrovito; Kejian Luo; Lisen Cheng; Alan Nelson; Tom Yang; Zuntu Xu

doi:10.1117/12.588772

17 March 2005 High-power 1060-nm InGaAs/GaAs single-mode laser diodes

Wei Gao, Andre Mastrovito, Kejian Luo, Lisen Cheng, Alan Nelson, Tom Yang, Zuntu Xu

Proceedings Volume 5711, High-Power Diode Laser Technology and Applications III; (2005) https://doi.org/10.1117/12.588772
Event: Lasers and Applications in Science and Engineering, 2005, San Jose, California, United States

Abstract

High power, 1060 nm, InGaAs/GaAs/AlGaAs graded-index, separate-confinement (GRINSCH), strained single quantum-well (SQW), single mode (SM) laser diodes grown by Metal-Organic Chemical-Vapor Deposition (MOCVD) are reported. The high quality quantum well with high strain, which is the key issue to make high performance 1060 nm laser diode, was obtained by optimizing growth conditions. For realizing SM lasers and modules, the ridge-waveguide lasers with 5 um width and 1500 μm cavity length are successfully fabricated and mounted epitaxial-side up onto AlN submounts using eutectic Au₈₀Sn₂₀ solder to allow easy access to the emission region for fiber coupling and to minimize the effects of die bonding stress on the ridge. These devices exhibit threshold current of less than 30 mA, slope efficiency of up to 1.0 W/A and high kink-free power of 500 mW at 25°C. The devices that were subjected to long-term aging test at 85°C, operating at 300 mW, first show very good reliability. The coupled module with more than 70% fiber coupling efficiency and more than 200 mW output power from a single mode fiber or polarization maintained (PM) fiber in 14-pin butterfly case is demonstrated.

Citation Download Citation

Wei Gao, Andre Mastrovito, Kejian Luo, Lisen Cheng, Alan Nelson, Tom Yang, and Zuntu Xu "High-power 1060-nm InGaAs/GaAs single-mode laser diodes", Proc. SPIE 5711, High-Power Diode Laser Technology and Applications III, (17 March 2005); https://doi.org/10.1117/12.588772

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