12 April 2005 Investigation of the process for manufacturing optoelectronic devices using nonorganic photoresists
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The results of experimental and theoretical investigations aimed at applying non-organic photoresists for mastering optoelectronic devices are represented. Samples for investigations were prepared using thermal evaporation of the glass with different As-S-Se compositions in vacuum onto a glass substrate. When exposing photoresist to obtain interference 2D/3D patterns, we used He-Cd laser irradiation with the wavelength 440 nm. The exposure was chosen from 20 to 150 mJ/cm2, and spatial frequencies of obtained gratings were from 600 to 3600 mm-1. The resist samples were processed using a waterless organic selective etchant based on amines. Results of investigations showed that As40S60-xSex (x=0-20) photoresist is characterized by higher holographic sensitivity (i.e. energetic expose necessary for providing given value of the diffraction efficiency). This enables us to create various combined optical-digital protective elements and master-copies for all types of optical disks (CD, DVD).
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Sergiy Al. Kostyukevych, Sergiy Al. Kostyukevych, Andrey A. Kryuchin, Andrey A. Kryuchin, Anna N. Morozovska, Anna N. Morozovska, Viacheslav V. Petrov, Viacheslav V. Petrov, Petr E. Shepeliavyi, Petr E. Shepeliavyi, Ekaterina V. Kostyukevich, Ekaterina V. Kostyukevich, Igor V. Tverdokhleb, Igor V. Tverdokhleb, } "Investigation of the process for manufacturing optoelectronic devices using nonorganic photoresists", Proc. SPIE 5713, Photon Processing in Microelectronics and Photonics IV, (12 April 2005); doi: 10.1117/12.591758; https://doi.org/10.1117/12.591758

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