New laser marking technology using ultrafast lasers

Bo Gu

doi:10.1117/12.591648

12 April 2005 New laser marking technology using ultrafast lasers

Bo Gu

Proceedings Volume 5713, Photon Processing in Microelectronics and Photonics IV; (2005) https://doi.org/10.1117/12.591648
Event: Lasers and Applications in Science and Engineering, 2005, San Jose, California, United States

Abstract

Laser marking of silicon wafers has been an industrial standard for many years. One of the emerging challenges for wafer marking is the recent introduction of very thin wafers. In this paper, we present a completely new laser marking technology using ultra-fast lasers in an attempt to address these challenges. Permanent and high contrast shallow marks (less than 1 micron) on silicon wafers are achieved with no bump or kerf height. The visibility of these marks is independent of the viewing angle, which is very unique and desirable. Mark font sizes much less than 0.3 mm have been demonstrated, which shows potential for micro and nano marking.

Citation Download Citation

Bo Gu "New laser marking technology using ultrafast lasers", Proc. SPIE 5713, Photon Processing in Microelectronics and Photonics IV, (12 April 2005); https://doi.org/10.1117/12.591648

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