22 January 2005 Silicon-glass anodic bonding at low temperature
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A characterization of low temperature silicon-glass anodic bonding (AB) parameters is presented here. Silicon-glass couples are bonded at temperature and voltage in the ranges of (200-430)°C and (0.2-2.5)kV, respectively. Two different electrodes are used for applying voltage, single point and planar. Low voltage, low temperature and short bonding time are investigated for different glass thickness and electrode type. The results show that the planar electrode provides a bonding time reduced to less than 5min against the few hours obtained by point electrode, and only slightly dependent on glass thickness. The bond strength of the bonded couples starts to be over the bulk glass strength at 300°C, when using planar electrode, and the high quality bond does not show voids. These results are particularly interesting in case of low temperature, and can be considered better than others presented in literature considering the simpler set-up and the novel electrode type used here. In addition, employment of above mentioned works are demonstrated for the fabrication of sensing microcomponents in lab-on-chip applications. The compatibility of porous silicon (PSi) and the very quick AB process, performed at low temperatures in order to prevent silicon pore filling with thermal oxides, is confirmed here. Satisfactory strength and bond quality was obtained at temperatures as low as 200°C, at voltages of 2500V, with process times lower than 1,5 minutes.
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Krzysztof Marcin Malecki, Krzysztof Marcin Malecki, Francesco Giuseppe Della Corte, Francesco Giuseppe Della Corte, "Silicon-glass anodic bonding at low temperature", Proc. SPIE 5715, Micromachining and Microfabrication Process Technology X, (22 January 2005); doi: 10.1117/12.590753; https://doi.org/10.1117/12.590753

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