22 January 2005 Uniformity-improving dummy structures for deep reactive ion etching (DRIE) processes
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Proceedings Volume 5715, Micromachining and Microfabrication Process Technology X; (2005); doi: 10.1117/12.588552
Event: MOEMS-MEMS Micro and Nanofabrication, 2005, San Jose, California, United States
Abstract
In typical DRIE processes, the etch rate variation across the wafer increases with pattern density, severely limiting the pattern densities that can be used at a specified etch rate tolerance. Here, we present a scheme for including uniformity-improving dummy structures in the etch mask layout that enable the use of high-density patterns in many DRIE process types. The dummy structures take up relatively little space in the layout and reduce the total etch rate variation of a 35% etchable area pattern by 66% while maintaining a high etch rate.
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Soren Jensen, Jonas M. Jensen, Ulrich J. Quaade, Ole Hansen, "Uniformity-improving dummy structures for deep reactive ion etching (DRIE) processes", Proc. SPIE 5715, Micromachining and Microfabrication Process Technology X, (22 January 2005); doi: 10.1117/12.588552; https://doi.org/10.1117/12.588552
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KEYWORDS
Etching

Semiconducting wafers

Tolerancing

Deep reactive ion etching

Fluorine

Finite element methods

Silicon

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