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22 January 2005 Uniformity-improving dummy structures for deep reactive ion etching (DRIE) processes
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In typical DRIE processes, the etch rate variation across the wafer increases with pattern density, severely limiting the pattern densities that can be used at a specified etch rate tolerance. Here, we present a scheme for including uniformity-improving dummy structures in the etch mask layout that enable the use of high-density patterns in many DRIE process types. The dummy structures take up relatively little space in the layout and reduce the total etch rate variation of a 35% etchable area pattern by 66% while maintaining a high etch rate.
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Soren Jensen, Jonas M. Jensen, Ulrich J. Quaade, and Ole Hansen "Uniformity-improving dummy structures for deep reactive ion etching (DRIE) processes", Proc. SPIE 5715, Micromachining and Microfabrication Process Technology X, (22 January 2005);

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