22 January 2005 Fabrication and characterization of vertical travel linear microactuator
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Proceedings Volume 5717, MEMS/MOEMS Components and Their Applications II; (2005); doi: 10.1117/12.591128
Event: MOEMS-MEMS Micro and Nanofabrication, 2005, San Jose, California, United States
Abstract
This paper describes design, fabrication and characterization of a proof-of-concept vertical travel linear microactuator designed to provide out-of-plane actuation for high precision positioning applications in space. The microactuator is designed to achieve vertical actuation travel by incorporating compliant beam structures within a SOI (Silicon on Insulator) wafer. Device structure except for the piezoelectric actuator is fabricated on the SOI wafer using Deep Reactive Ion Etch (DRIE) process. Incremental travel distance of the piezoelectric actuator is adjustable at nanometer level by controlling voltage. Bistable beam geometry is employed to minimize initial gaps between electrodes. The footprint of an actuator is approximately 2 mm x 4 mm. Actuation is characterized with LabVIEW-based test bed. Actuation voltage sequence is generated by the LabVIEW controlled power relays. Vertical actuation in the range of 500 nm over 10-cycle was observed using WYKO RST Plus Optical Profiler.
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Risaku Toda, Eui-Hyeok Yang, "Fabrication and characterization of vertical travel linear microactuator", Proc. SPIE 5717, MEMS/MOEMS Components and Their Applications II, (22 January 2005); doi: 10.1117/12.591128; https://doi.org/10.1117/12.591128
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KEYWORDS
Actuators

Microactuators

Semiconducting wafers

Silicon

Deep reactive ion etching

Electrodes

Reactive ion etching

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