22 January 2005 Deep PFCB polymer etch development for photonic devices
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Abstract
Dramatic reductions in the size of waveguide bends for materials with low core/clad refractive index contrast can be achieved with single air interface bends (SAIBs) based on total internal reflection. However, high optical efficiency for such bends requires vertical interfaces with low surface roughness. In this presentation we report the development of a highly anisotropic etch for perfluorocyclobutane (PFCB) waveguide structures. We examine the use of inductively coupled plasma reactive ion etching (ICP RIE) based on both oxygen/helium and carbon dioxide/helium etch chemistries to achieve the desired interface quality for high efficiency waveguide bends.
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Jaime Cardenas, Gregory P. Nordin, "Deep PFCB polymer etch development for photonic devices", Proc. SPIE 5720, Micromachining Technology for Micro-Optics and Nano-Optics III, (22 January 2005); doi: 10.1117/12.591161; https://doi.org/10.1117/12.591161
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