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22 January 2005 Etching three-dimensional photonic crystals in GaAs
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Abstract
We present an efficient method for the fabrication of three-dimensional photonic crystals in GaAs-based materials. The method exploits the dependence of the oxidation rate of AlGaAs on the aluminum content in the alloy. As a result, a wide range of oxidation profiles is possible. The oxidation profiles are determined by the Al concentration profiles in a GaAs/AlGaAs stack grown by molecular beam epitaxy, and the resulting three-dimensional structure depends on the initial two-dimensional pattern defined by standard lithography. We detail the process and present preliminary results showing the viability of the method to realize three-dimensional photonic crystals of various geometries.
© (2005) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Janusz A. Murakowski, Chris Schuetz, Garrett J. Schneider, and Dennis W. Prather "Etching three-dimensional photonic crystals in GaAs", Proc. SPIE 5720, Micromachining Technology for Micro-Optics and Nano-Optics III, (22 January 2005); https://doi.org/10.1117/12.591282
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