22 January 2005 Study on 193-nm immersion interference lithography
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Abstract
We report bubble scattering effects on photoresist when a 193nm immersion interferometric lithographic system is employed. According to Mie theory and FDTD simulation, the scattering effect of a bubble becomes significant and may cause defects on a resist pattern when its diameter is greater than 60nm. Some preliminary experimental results are also included.
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Lon A. Wang, W. C. Chang, K. Y. Chi, S. K. Liu, C. D. Lee, "Study on 193-nm immersion interference lithography", Proc. SPIE 5720, Micromachining Technology for Micro-Optics and Nano-Optics III, (22 January 2005); doi: 10.1117/12.600795; https://doi.org/10.1117/12.600795
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