28 April 2005 A novel light-emitting structure for the 3- to 5-μm spectral range
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Abstract
We present a novel hybrid light emitting device design based on a standard InAlGaAs/GaAs high-power laser diode array chip as a pump source and a narrow-gap PbSe-layer as active optical material. Maximum cw output powers of more than 1.1 mW and slope efficiencies of 0.4 mW/A are obtained at 25 °C. The external power efficiency amounts to 3.5×10-2 %. The emission wavelength is 4.2 μm, with a half width of 770 nm (50 meV). Details about the optimization of the emitter material and device design are discussed as well.
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J. W. Tomm, J. W. Tomm, F. Weik, F. Weik, R. Glatthaar, R. Glatthaar, U. Vetter, U. Vetter, J. Nurnus, J. Nurnus, A. Lambrecht, A. Lambrecht, B. Spellenberg, B. Spellenberg, M. Bassler, M. Bassler, M. Behringer, M. Behringer, J. Luft, J. Luft, "A novel light-emitting structure for the 3- to 5-μm spectral range", Proc. SPIE 5722, Physics and Simulation of Optoelectronic Devices XIII, (28 April 2005); doi: 10.1117/12.611330; https://doi.org/10.1117/12.611330
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