High-power single-transverse-mode holey VCSELs

Akio Furukawa; Mitsunari Hoshi; Satoshi Sasaki; Atsushi Matsuzono; Kosuke Moritoh; Toshihiko Baba

doi:10.1117/12.601954

28 April 2005 High-power single-transverse-mode holey VCSELs (Invited Paper)

Akio Furukawa, Mitsunari Hoshi, Satoshi Sasaki, Atsushi Matsuzono, Kosuke Moritoh, Toshihiko Baba

Proceedings Volume 5722, Physics and Simulation of Optoelectronic Devices XIII; (2005) https://doi.org/10.1117/12.601954
Event: Integrated Optoelectronic Devices 2005, 2005, San Jose, California, United States

Abstract

By introducing triangular holes into oxide confined 850nm monolithic vertical-cavity surface-emitting lasers (VCSELs), single-transverse-mode operation has been obtained for large oxide apertures of 14-15 microns. The two-dimensional triangular holes etched on the device surface were aligned circumferentially along the aperture perimeter, with their tips surrounding the device center. When the holes had a relatively large lateral penetration into the oxide aperture, the holey VCSEL lased with a single spot near field pattern with a high side-mode suppression ratio (SMSR) of 45-50dB, and an output power of 2mW. In this case, it is assumed that the triangular holes are acting as a highly mode selective loss mechanism. On the other hand, when the penetration of the holes was relatively small, an SMSR of 40dB was obtained from a large area "floral" near field pattern, with a record high single-mode output power of 7mW. The lasing spectrum and far field intensity profile of this "floral" type emission indicates that it is a somewhat deformed fundamental mode that is extending over the whole device, and oscillating in-phase. The ability of triangular holes to suppress high order modes in large area oxide confined VCSELs should be effective for systems with wavelengths other than 850nm as well.

Citation Download Citation

Akio Furukawa, Mitsunari Hoshi, Satoshi Sasaki, Atsushi Matsuzono, Kosuke Moritoh, and Toshihiko Baba "High-power single-transverse-mode holey VCSELs (Invited Paper)", Proc. SPIE 5722, Physics and Simulation of Optoelectronic Devices XIII, (28 April 2005); https://doi.org/10.1117/12.601954

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