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28 April 2005 Modeling of injection-induced conductivity effects in light-emitting and laser diodes
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Abstract
The nonlinear contribution into the diode resistance in addition to the nonlinearity of injecting p-n junction is considered associated with a carrier injection into some nominally passive regions adjacent to the active region of the device (effect of the injection-induced conductivity, IIC). A condition the IIC to give a substantial contribution is availability of resistive passive layer or depleted layer in the diode chip that can be undergone to a conductivity modification by carrier injection and leakeage. There are some consequences that look like unusual features: (i) anomaously large the non-ideality factor of I-V curve; (ii) anomalous electrical response on the variation of the optical feedback in the laser diode device; (iii) anomalous sign of the threshold-related kink of the differential resistance of laser diode.
© (2005) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
P. G. Eliseev "Modeling of injection-induced conductivity effects in light-emitting and laser diodes", Proc. SPIE 5722, Physics and Simulation of Optoelectronic Devices XIII, (28 April 2005); https://doi.org/10.1117/12.601819
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