28 April 2005 Optical properties of homoepitaxial and heteroepitaxial ZnO grown by molecular beam epitaxy
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Abstract
Homoepitaxial and heteroepitaxial ZnO films were grown by plasma-assisted molecular beam epitaxy (P-MBE). Homoepitaxial ZnO layers were grown on an O-face melt-grown ZnO (0001) substrate. Heteroepitaxial ZnO layers were grown on an epitaxial GaN template predeposited by metalorganic chemical vapor deposition on a c-plane sapphire substrate. There exists a residual strain in the heteroepitaxial ZnO, which is ε = -0.25%. Low-intensity excitation PL spectra of ZnO epilayers excited by a He-Cd laser exhibit only bound-exciton emission with phonon replicas. The quality of ZnO epilayers is better than that of ZnO substrate. However, under high-intensity excitation by a N2 laser, the emission due to exciton-exciton collisions dominates the PL spectrum from heteroepitaxial ZnO layer but is not observed from homoepitaxial ZnO layer.
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C. J. Pan, C. J. Pan, C. W. Tu, C. W. Tu, J. J. Song, J. J. Song, G. Cantwell, G. Cantwell, C. C. Lee, C. C. Lee, B. J. Pong, B. J. Pong, G. C. Chi, G. C. Chi, } "Optical properties of homoepitaxial and heteroepitaxial ZnO grown by molecular beam epitaxy", Proc. SPIE 5722, Physics and Simulation of Optoelectronic Devices XIII, (28 April 2005); doi: 10.1117/12.590388; https://doi.org/10.1117/12.590388
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