28 April 2005 Optimization of epitaxial layer design for high brightness tapered lasers
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Abstract
A comparative simulation study of the optical output characteristics of tapered lasers with different epitaxial structure was performed. The simulation model self-consistently solves the steady state electrical and optical equations for the flared unstable resonator and was previously backed by experiments on one of the simulated structures. Three different epitaxial designs emitting at 975 nm were analyzed: a standard single quantum well symmetrically located in the confinement region (s-SQW), a double quantum well also symmetrically located (s-DQW) and an asymmetrically located double quantum well (a-DQW). The symmetric structures have different confinement factor but a similar ratio between the active layer thickness and the confinement factor, dQW/Γ, while the a-DQW has similar confinement factor than the s-SQW, but double dQW/Γ. A better performance is predicted for the a-DQW design, reaching considerably higher output power with good beam quality. The results are interpreted in terms of a lower density of power in the QW in the case of the a-DQW design, thus delaying to higher output power the onset of the non-linear effects that degrade the beam quality. The role of dQW/Γ as a figure of merit for high brightness tapered lasers is emphasized.
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J. M. G. Tijero, J. M. G. Tijero, D. Rodriguez, D. Rodriguez, L. Borruel, L. Borruel, S. Sujecki, S. Sujecki, E. C. Larkins, E. C. Larkins, I. Esquivias, I. Esquivias, } "Optimization of epitaxial layer design for high brightness tapered lasers", Proc. SPIE 5722, Physics and Simulation of Optoelectronic Devices XIII, (28 April 2005); doi: 10.1117/12.590670; https://doi.org/10.1117/12.590670
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