28 April 2005 Temperature dependent output characteristics of p-doped 1.1 and 1.3 μm quantum dot lasers
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Abstract
The characteristics of p-doped 1.1 μm and 1.3 μm self-assembled In(Ga)As quantum dot lasers grown by molecular beam epitaxy have been studied. With optimum p-doping, we demonstrate quantum dot lasers with zero-temperature dependence of the threshold current (T0 = ∞) and the output slope efficiency. These characteristics are explained through a self-consistent model that includes temperature-dependent Auger recombination in the quantum dots. With tunnel injection, we measure greatly enhanced -3dB frequency response, 25 GHz and 11 GHz in 1.1 μm and 1.3 μm tunnel injection quantum dot lasers, respectively. These devices also exhibit near zero α-parameters and extremely small chirp (< 0.2 Å), in addition to temperature insensitive operation.
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Z. Mi, Z. Mi, S. Fathpour, S. Fathpour, P. Bhattacharya, P. Bhattacharya, A. R. Kovsh, A. R. Kovsh, S. S. Mikhrin, S. S. Mikhrin, I. L. Krestnikov, I. L. Krestnikov, A. V. Kozhukhov, A. V. Kozhukhov, N. N. Ledentsov, N. N. Ledentsov, } "Temperature dependent output characteristics of p-doped 1.1 and 1.3 μm quantum dot lasers", Proc. SPIE 5722, Physics and Simulation of Optoelectronic Devices XIII, (28 April 2005); doi: 10.1117/12.589891; https://doi.org/10.1117/12.589891
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