28 April 2005 The role of acceptor anneal temperature on the performance of InGaN/GaN quantum well light emitting diodes
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Abstract
We have measured the pulsed light-current characteristics of a series of InGaN/GaN quantum well light-emitting diodes which were annealed post-growth at different temperatures as a function of their operating temperature. The light output at a fixed current density increases with the temperature of measurement, reaches a maximum and then decreases for all the diodes. The measurement temperature at which the maximum light output occurs and the magnitude of the light output depend on the post-growth thermal anneal temperature. The thermal anneal temperature is thought to affect the acceptor concentration in the p-doped cap layer, which also changes the carrier mobility. A simulation, incorporating carrier leakage, is used to reproduce the experimental behavior where the acceptor concentration is changed to represent the effects of the different anneal temperatures.
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J. D. Thomson, J. D. Thomson, I. A. Pope, I. A. Pope, P. M. Smowton, P. M. Smowton, P. Blood, P. Blood, R. J. Lynch, R. J. Lynch, G. Hill, G. Hill, T. Wang, T. Wang, P. J. Parbrook, P. J. Parbrook, } "The role of acceptor anneal temperature on the performance of InGaN/GaN quantum well light emitting diodes", Proc. SPIE 5722, Physics and Simulation of Optoelectronic Devices XIII, (28 April 2005); doi: 10.1117/12.591897; https://doi.org/10.1117/12.591897
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