4 April 2005 Optimization of twin-contact semiconductor optical amplifiers for use in integrated interferometric devices
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Abstract
With the continuous advent of new multimedia technologies, the local network bandwidth is getting closer and closer to limits set by electronic switching constraints. All-optical networks have long been demonstrated in the laboratory and rely on nonlinear switching devices such as Michelson Interferometers (MIs) for all-optical routing and all-optical digital processing. Hybrid integrated MIs allow for a greater electro-optical integration and thus easier packaging. It was recently published that multi-contact optical amplifiers provide a greater ease of use due to their greater flexibility in injecting current into the device. We have therefore investigated the optimisation of twin-contact SOAs for use in one arm of a Michelson device in order to provide the highest possible optically induced phase shift sine qua non for interferometry. The SOA section length as well as the corresponding injection currents were optimised and it was found that non-symmetrical sections (i.e. of different lengths and injection currents) produces best results with phase shifts up to 8.6 radians for 541μm (333μm + 208μm) long devices. This is explained by the non-symmetrical gains saturation effects created by the co-propagating pump and probe signal when passing through the various SOA sections. Multi-contact SOAs are hoped to provide a new ways of designing hybrid integrated interferometric devices by allowing greater control over the optical amplification process within the device.
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Emmanuel Moll, Emmanuel Moll, Yew Jun Chai, Yew Jun Chai, Kevin A. Williams, Kevin A. Williams, Richard V. Penty, Richard V. Penty, Ian H. White, Ian H. White, } "Optimization of twin-contact semiconductor optical amplifiers for use in integrated interferometric devices", Proc. SPIE 5723, Optical Components and Materials II, (4 April 2005); doi: 10.1117/12.593279; https://doi.org/10.1117/12.593279
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