13 April 2005 Studies of electron and hole velocity overshoots in a GaAs-based p-i-n semiconductor nanostructure by picosecond Raman spectroscopy
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Abstract
Velocity overshoot phenomenon for electrons as well as holes in a GaAs-based p-i-n nanostructure have been studied by using transient picosecond Raman spectroscopy. Under the picosecond laser excitation, we have found that the extent of velocity overshoot for electrons is comparable to holes. These experimental results have been explained in terms of various carrier scattering processes.
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W. Liang, W. Liang, Kong-Thon Tsen, Kong-Thon Tsen, C. Poweleit, C. Poweleit, Hadis Morkoc, Hadis Morkoc, } "Studies of electron and hole velocity overshoots in a GaAs-based p-i-n semiconductor nanostructure by picosecond Raman spectroscopy", Proc. SPIE 5725, Ultrafast Phenomena in Semiconductors and Nanostructure Materials IX, (13 April 2005); doi: 10.1117/12.592968; https://doi.org/10.1117/12.592968
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