13 April 2005 Studies of non-equilibrium longitudinal optical phonons in InN by picosecond Raman spectroscopy
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Abstract
Non-equilibrium longitudinal optical phonons in a high quality, single crystal wurtzite structure InN sample have been studied by picosecond Raman spectroscopy. Our experimental results demonstrate that the bandgap of InN cannot be around 1.89 eV; but are consistent with a bandgap of around 0.8 eV. In addition, they disprove the idea that 0.8 eV-luminescence observed recently in InN is due to deep level radiative emission in InN.
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W. Liang, W. Liang, Kong-Thon Tsen, Kong-Thon Tsen, David K. Ferry, David K. Ferry, Hai Lu, Hai Lu, William J. Schaff, William J. Schaff, } "Studies of non-equilibrium longitudinal optical phonons in InN by picosecond Raman spectroscopy", Proc. SPIE 5725, Ultrafast Phenomena in Semiconductors and Nanostructure Materials IX, (13 April 2005); doi: 10.1117/12.592971; https://doi.org/10.1117/12.592971
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