Temperature dependence of the threshold electric field in a hot electron VCSEL

Ali Serpenguzel; Naci Balkan; Ayse Erol; M. Cetin Arikan; John Roberts

doi:10.1117/12.591107

Translator Disclaimer

13 April 2005 Temperature dependence of the threshold electric field in a hot electron VCSEL (Invited Paper)

Ali Serpenguzel, Naci Balkan, Ayse Erol, M. Cetin Arikan, John Roberts

Author Affiliations +

Proceedings Volume 5725, Ultrafast Phenomena in Semiconductors and Nanostructure Materials IX; (2005) https://doi.org/10.1117/12.591107
Event: Integrated Optoelectronic Devices 2005, 2005, San Jose, California, United States

Abstract

The operation of the Hot Electron Light Emitting and Lasing in Semiconductor Heterostructure -- Vertical Cavity Surface Emitting Laser (HELLISH-VCSEL) devices is based on hot carrier transport parallel to the layers of Ga_1-xAl_xAs p-n junction. It is therefore a field - effect device and the light emission from the device is independent of the polarity of the applied voltage. In this study, we present the temperature dependence of the operational characteristics of the device. Experimental studies comprising of the measurements of the I-V characteristics, electroluminescence, reflectivity, and temperature dependent light-applied electric field (L-F) characteristics are conducted to find the optimum operating temperature of the device.

Citation Download Citation

Ali Serpenguzel, Naci Balkan, Ayse Erol, M. Cetin Arikan, and John Roberts "Temperature dependence of the threshold electric field in a hot electron VCSEL (Invited Paper)", Proc. SPIE 5725, Ultrafast Phenomena in Semiconductors and Nanostructure Materials IX, (13 April 2005); https://doi.org/10.1117/12.591107

ACCESS THE FULL ARTICLE