Paper
13 April 2005 Time-resolved dynamics in single InGaN quantum dots (Invited Paper)
Robert A. Taylor, James W. Robinson, James H. Rice, Kwan H. Lee, Anas Jarjour, Jong H. Na, Shazia Yasin, Rachel A. Oliver, Menno J. Kappers, Colin J. Humphreys, G. Andrew D. Briggs, David P. Williams, Eoin P. O'Reilly, Aleksey D. Andreev, Yasuhiko Arakawa
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Abstract
We present measurements of microphotoluminescence decay dynamics for single InGaN quantum dots. The recombination is shown to be characterized by a single exponential decay, in contrast to the non-exponential recombination dynamics seen in the two-dimensional wetting layer. The lifetimes of single dots in the temperature range 4 K to 60 K decrease with increasing temperature. Microphotoluminescence measurements of exciton complexes in single MOVPE-grown InGaN quantum dots are also reported. We find the exciton-biexciton and exciton-charged exciton splitting energies to be 25 meV and 10 meV to the higher-energy side of the exciton ground state, respectively. Assignments of the ground state exciton, biexciton and charged exciton are supported by theoretical calculations. These measurements have been extended to investigate the time-resolved dynamics of biexciton transitions in the quantum dots. The measurements yield a radiative recombination lifetime of 1.0 ns for the exciton and 1.4 ns for the biexciton. The data can be fitted to a coupled differential equation rate equation model, confirming that the exciton state is refilled as biexcitons undergo radiative decay.
© (2005) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Robert A. Taylor, James W. Robinson, James H. Rice, Kwan H. Lee, Anas Jarjour, Jong H. Na, Shazia Yasin, Rachel A. Oliver, Menno J. Kappers, Colin J. Humphreys, G. Andrew D. Briggs, David P. Williams, Eoin P. O'Reilly, Aleksey D. Andreev, and Yasuhiko Arakawa "Time-resolved dynamics in single InGaN quantum dots (Invited Paper)", Proc. SPIE 5725, Ultrafast Phenomena in Semiconductors and Nanostructure Materials IX, (13 April 2005); https://doi.org/10.1117/12.583431
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KEYWORDS
Indium gallium nitride

Excitons

Quantum dots

Electrons

Luminescence

Solids

Temperature metrology

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