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13 April 2005 Time-resolved photoluminescence measurements of InAs self-assembled quantum dots (Invited Paper)
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Time-resolved photoluminescence decay measurements have been performed on samples with varying sized self-assembled InAs/GaAs quantum dot ensembles, formed by substrate mis-orientation alone, but otherwise under identical growth conditions. Ground-state radiative recombination lifetimes from 0.8 to 5.3 ns in the incident energy density range of 0.79 pJcm-2 - 40 nJcm-2 at a temperature of 77 K were obtained. It was found that a reduction of the quantum dot size led to a corresponding reduction of the radiative lifetime. The evident bi-exponential decay was obtained for the ground state emission of the quantum dot array, with the slower second component attributed to a carrier re-capturing and indirect radiative recombination processes. Also experimental evidence of the effect of the AlGaAs barrier in InAs QDs emitting in the wavelength range 1200-1300nm is presented. Time-resolved photoluminescence measurements have been performed on samples with different compositions of Al in the barrier. A full discussion of the lifetimes of these near infra-red emitting dots will be presented.
© (2005) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Sara Pellegrini, Gerald Stuart Buller, Leonid Ya. Karachinsky, A. S. Shkolnik, Nikita Yu. Gordeev, Georgy G. Zegrya, Vadim P. Evtikhiev, Ian R. Sellers, Maurice S. Skolnick, H. Y. Liu, and Mark Hopkinson "Time-resolved photoluminescence measurements of InAs self-assembled quantum dots (Invited Paper)", Proc. SPIE 5725, Ultrafast Phenomena in Semiconductors and Nanostructure Materials IX, (13 April 2005);

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